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標題Title: Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells_2
作者Authors: 邱裕中
上傳單位Department: 電子工程系
上傳時間Date: 2012-12-5
上傳者Author: 邱裕中
審核單位Department: 電子工程系
審核老師Teacher: 邱裕中
檔案類型Categories: 研究生論文報告Thesis
關鍵詞Keyword: triangular quantum well、MQW、LED
摘要Abstract: These issues include electron leakage and polarization field in the
MQW active region, both of which contribute to the reduction of
internal quantum efficiency at high driving currents, i.e., the efficiency
droop phenomena. Also, the poor transport of carriers and the low
electron capture rate in the MQW are also limitations impeding the
improvement of LEDs.

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