尚未登入 請由此登入
 
 
 










知識分享平台Eshare檢視資訊View
返回前一頁Back
      [檢舉]

標題Title: The Influence of Annealing Treatment on Physics and Electrical Characteristics of Ba
作者Authors: 鄭建民,Wen-Cheng Tzou..等
上傳單位Department: 電子工程系
上傳時間Date: 2009-11-22
上傳者Author: 鄭建民
審核單位Department: 電子工程系
審核老師Teacher: 鄭建民
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Ba(Zr0.1Ti0.9)O3,ferroelectric,sputtering
摘要Abstract: Perovskite Ba(Zr0.1Ti0.9)O3 (BZ1T9) ferroelectric thin films well deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices are produced and investigated. The sputtering parameters of as-deposited BZ1T9 thin films were rf power of 160 W, chamber pressure of 10 mTorr, substrate temperature of 550oC, and an oxygen concentration of 40%. From the SEM cross-sectional observation, the deposition rate of the as-deposited BZT thin films were about 2.5 nm/min. Additionally, the maximum dielectric constant and leakage current density of annealed BZT films under the rapid temperature annealing would be increased, as the temperature increased
to 6500C. Further, the maximum remnant polarization and coercive field of BZT films were found and calculated from the p-E curves.

檔案名稱
FileName
檔案大小
Size
檔案格式
Format
瀏覽次數
Browses
下載次數
Downloads
2009_11_586e8365.pdf 258Kb pdf 427 111
文件中檔案:
 

開啟檔案Download
 
 
返回前一頁