尚未登入 請由此登入
 
 
 










知識分享平台Eshare檢視資訊View
返回前一頁Back
      [檢舉]

標題Title: THE EFFECT OF RF POWER ON ELECTRICAL CHARACTERISTICS OF
作者Authors: 鄭建民,Kuang-Yao Wu..等
上傳單位Department: 電子工程系
上傳時間Date: 2009-11-22
上傳者Author: 鄭建民
審核單位Department: 電子工程系
審核老師Teacher: 鄭建民
檔案類型Categories: 論文Thesis
關鍵詞Keyword: (Bi3.9La0.1)(Ti2.9V0.1)O12 (BLTV),thin films,ferroelectric
摘要Abstract: In this study, the (Bi3.9La0.1)(Ti2.9V0.1)O12 (BLTV)ceramic target is fabricated by ourselves and the BLTV thin film is developed because of its excellent ferroelectric characteristics and lower leakage current density. The BLTV thin films have been successfully deposited on SiO2/Si substrate under optimal radio frequency (RF)depositing parameters with different RF power. We have found that the RF power has large effect on the crystalline orientation, thickness (depositing rate) and roughness of BLTV thin films. The metal-insulator-metal (MIM, or called metal-ferroelectric-metal, MFM) structure is fabricated for the characteristic measurement of BLTV thin films. The influence of RF power on the dielectric constant and leakage current density of BLTV thin films will be also investigated. As RF power is equal to 130 W, the ferroelectric characteristics and lower
leakage current density can be obtained.

檔案名稱
FileName
檔案大小
Size
檔案格式
Format
瀏覽次數
Browses
下載次數
Downloads
2009_11_dcf16a82.pdf 560Kb pdf 541 112
文件中檔案:
 

開啟檔案Download
 
 
返回前一頁