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標題Title: Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices
作者Authors: 許進明,C.S. Kuo..等
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-25
上傳者Author: 許進明
審核單位Department: 光電工程系
審核老師Teacher: 許進明
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Nickel,ITO, OLED, Dark spot
摘要Abstract: This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could
considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic
light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO
to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime
performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of
Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms
showed little effect on deteriorating the light-emitting mechanism of OLED devices.

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2009_11_932f564d.pdf 1089Kb pdf 544 156
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