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標題Title: Turn-on voltage reduction of organic light-emitting diode using a nickel-doped indium tin oxide anode prepared by single target sputtering
作者Authors: 許進明,Wen-Tuan Wu..等
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-25
上傳者Author: 許進明
審核單位Department: 光電工程系
審核老師Teacher: 許進明
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Indium tin oxide (ITO); Organic light-emitting diode (OLED); Nickel (Ni)
摘要Abstract: Organic light-emitting diodes (OLEDs) with a nickel (Ni)-doped indium tin oxide (ITO) anode were fabricated. The Ni-doped ITO
anode was prepared using sputter deposition of Ni–ITO single targets consisting of 1, 3 and 5 wt% of nickel. Turn-on voltage of OLED
devices with the Ni-doped ITO anode was reduced by 2.5, 4 and 3.8 V for 1, 3 and 5 wt% targets, respectively. Half-luminance lifetime
was improved by 2.5 times with a Ni(3 wt%)-ITO single target. The successful development in preparing Ni-doped ITO films by Ni–ITO
single target sputtering allows this approach to be adopted for OLED manufacturing.

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