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標題Title: Effect of Argon Purge Amonut on the Photoelectrochemical Properties of Nitrogen-doped TiO2 Films Grown by Atomic Layer Deposition
作者Authors: 謝煜弘
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-25
上傳者Author: 謝煜弘
審核單位Department: 光電工程系
審核老師Teacher: 謝煜弘
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Nitrogen-doped,Atomic Layer,Purge
摘要Abstract: N-doped TiO2 films were grown on n+ Silicon substrates at 400℃ by atomic layer deposition (ALD) with TiCl4 and NH4OH as the precursors. The effect of Ar purge amount on the film properties was investigated. The surface morphology, crystal structure, and photocurrent density of N-doped TiO2 films were characterized by XRD, SEM, and Potentiostat, respectively. The results show that the deposited films are visible-light active at the wavelength up to 500 nm. The photocurrent density increases with the increase of Ar purge amount. Keywords: Photocurrent, ALD

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