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標題Title: Enhanced Light Output Power of InGaN/GaN MQW LEDs by Roughening the p-GaN Surface with Periodic Textured TCL
作者Authors: 管鴻,Shun-yuan Huang..等
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-27
上傳者Author: 管鴻
審核單位Department: 光電工程系
審核老師Teacher: 管鴻
檔案類型Categories: 論文Thesis
關鍵詞Keyword: GaN, light-emitting diodes (LEDs), periodic textured structure
摘要Abstract: Abstract --- GaN light emitting diodes (LEDs) with a rough surface were demonstrated and fabricated by MOCVD. On the other hand ,deposition and production of periodic textured structure of different metal materials as Ni/Au (i.e LED I and LED II) and ITO (i.e LED III and LED IV) on the rough surface, respectively. The light intensity from the LED I increased by 5.1% at injection currents of 20mA compared to that of LED II, on the side, The light intensity form the LED III by ITO showed an enhancement of 15% when compared LED IV. Finally, LED I enhanced output power by 57% at 20 mA, as compared to the LED IV.

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2009_11_1cdc132a.doc 1227Kb doc 751 266
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