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標題Title: Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates
作者Authors: 管鴻,林耀祥..等
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-27
上傳者Author: 管鴻
審核單位Department: 光電工程系
審核老師Teacher: 管鴻
檔案類型Categories: 研究生論文報告Thesis
關鍵詞Keyword: pattrned sapphire substrates, ELOG growth
摘要Abstract: We found a strong difference of the property of ELO between two trench directions. In order to obtain coalesced AlN, (1120) trench is essential. The average dislocation density of a coalesced AlN was 6.7 × 108 cm–2, which is less than a half that of AlN grown on planer sapphire.
(1120) trench (0002) XRD rocking curve FWHM 314 aresec is better than (1010) 352 aresec. These results show that ELO technique is also suitable for reducing dislocation density of AlN on sapphire.

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2009_11_4a2dbb53.ppt 298Kb ppt 635 230
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