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標題Title: Improvement in light-output efficiency of Near-Ultraviolet InGaN–GaN LEDs Fabricated on Stripe Patterned Sapphire Substrate
作者Authors: 管鴻
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-27
上傳者Author: 管鴻
審核單位Department: 光電工程系
審核老師Teacher: 管鴻
檔案類型Categories: 論文Thesis
關鍵詞Keyword: ELOG, ABLEG,patterned sapphire substrates
摘要Abstract: plots the reliability test results of stripe PSS and conventional LEDs under the stress condition of 55C° and 50 mA. The same trend of the declination of the output power might present the same order of the stripe PSS and conventional LEDs. In summary, the 20% improvement of output power is due to the better epitaxial quality by the reduction of threading dislocation, and that is a good agreement with the simulation result.

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2009_11_ec42801f.ppt 408Kb ppt 745 411
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