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標題Title: The 1.54-um photoluminescence form an
作者Authors: 高至誠,吳原億..等
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-27
上傳者Author: 高至誠
審核單位Department: 光電工程系
審核老師Teacher: 高至誠
檔案類型Categories: 論文Thesis
關鍵詞Keyword: SiO2 film deposited on Si by RF magnetron sputtering
摘要Abstract: Er3+ luminescence at 1.54 μm, due to the intra-4f transition from the first excited to the ground state (4I13/2 → 4I15/2), has attracted great interest, since the emission wavelength is coincident with the absorption minimum of silica-based optical fibers.

In this work, we report the PL property from an (Er, Ge) co-doped SiO2 structural sample deposited by rf magnetron sputtering, and the influence of the annealing conditions on the PL.

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2009_11_06d74adc.ppt 374Kb ppt 291 55
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