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標題Title: Influence of oxygen content on the 1.54 μm luminescenceof Er-doped amorphous SiOx thin films
作者Authors: 高至誠,吳原億..等
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-27
上傳者Author: 高至誠
審核單位Department: 光電工程系
審核老師Teacher: 高至誠
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Er-doped amorphous SiOx thin films
摘要Abstract: Erbium has played an important role in the development of the optical communication technology because the 4I13/2-4I15/2 transition in the internal 4f shell of the trivalent Er3+ ion presents an emissionat1.54 mm, which corresponds to the maximum transparency of the silica-based optical fiber.

In order to better define the optimal material for the luminescence of the Er3+ ions in the near-infrared range, we have studied the influence of the oxygen content in amorphous SiOx thin film son the Er-related luminescence.

The films with different oxygen contents (0≦x≦2) were prepared by co-evaporation of Si and SiO2 and were annealed at temperatures up to 900 ℃.

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2009_11_e728ca7d.ppt 180Kb ppt 265 55
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