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標題Title: Optimizing Si nanocrystal dependent PL by detuning O/Si composition ratio of Si-rich SiOx grown by PECVD with Argon diluted SiH4
作者Authors: 高至誠,陳鏗仁..等
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-27
上傳者Author: 高至誠
審核單位Department: 光電工程系
審核老師Teacher: 高至誠
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Si nanocrystal,PL Si-rich SiOx grown , by PECVD with Argon diluted SiH4
摘要Abstract: Versatile technologies have been proposed for synthesizing Si-rich oxide (SiOx) or nitride (SixNy) with buried Si nanocrystals.

Since it enables the easy deposition of a Si-rich SiOx film with a sufficiently high density of excess Si atoms by controlling the fluence of reactant gases.

There are few detailed studies on the correlation between the N2O/SiH4 fluence ratio and the O/Si composition ratio for optimizing the nc-Si precipitation.

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2009_11_c27f4cd1.pdf 1344Kb pdf 242 66
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