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標題Title: Oxidation resistance of atomic-layer deposited TiN films on thermal SiO2
作者Authors: 鄭錫恩,Wen-Jen Lee..等
上傳單位Department: 光電工程系
上傳時間Date: 2009-11-27
上傳者Author: 鄭錫恩
審核單位Department: 光電工程系
審核老師Teacher: 鄭錫恩
檔案類型Categories: 論文Thesis
關鍵詞Keyword: atomic-layer deposited TiN films
摘要Abstract: In this study, an atomic-layer deposition system was used to deposit TiN films on thermal SiO2 substrates by means of sequential pulses of TiCl4 and NH3. The effects of deposition temperature on TiN growth rate, film compositions, and oxidation properties were investigated. The results show that the growth rate is about 0.3 nm per deposition cycle and almost independent of the deposition temperature in the range of 300-500oC. The oxidation resistance, however, highly depends on the deposition temperature. The XRD patterns show that the TiN films deposited at 300oC were oxidized and became TiO2 compound after 1 hr annealing at 500oC in O2 atmosphere, whereas the films deposited at 500oC still had good conductivity and no TiO2 diffraction peaks were found.

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2009_11_12620bf8.pdf 268Kb pdf 513 387
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