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標題Title: 104-1-Study of the strain relaxation in InGaNGaN-張祥峯
作者Authors: 張祥峯
上傳單位Department: 光電工程系
上傳時間Date: 2015-12-28
上傳者Author: 張祥峯
審核單位Department: 光電工程系
審核老師Teacher: 許進明
檔案類型Categories: 課堂報告In-class Report
關鍵詞Keyword: strain relaxation, inGaN/GaN
摘要Abstract: The samples used in this article are InGaN/GaN MQW structures with 2, 3, 5, or 10 periods.

The samples were grown on sapphire by atmospheric pressure metalorganic chemical vapor deposition(MOCVD)

The substrates were initially treated in H2 ambient at 1150 °C, followed by the growth of a 25 nm thick low-temperature (450 °C) GaN buffer layer and a 1.8 mm undoped GaN layer grown at 1075 °C. The undoped MQW structures were then grown at a temperature of 700 °C, and consisted of a 4 nm InxGa1-xN well and 9 nm GaN barriers with the different periods mentioned above.

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