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標題Title: Resistive Switching Properties in Transparent Nonvolatile Indium Tin Oxide Thin Film RRAMs
作者Authors: 鄭建民,Mei-Li Chen..等
上傳單位Department: 電子工程系
上傳時間Date: 2016-6-13
上傳者Author: 鄭建民
審核單位Department: 電子工程系
審核老師Teacher: 鄭建民
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Nonvolatile, Bipolar switching, RF sputtering, Resistance random access memory
摘要Abstract: The bipolar switching and electrical conduction properties in indium tin oxide resistance random access memory (RRAM) device were investigated in this study. By the RF magnetron sputtering method (ITO target, RF power 50 W, chamber pressure 20 mTorr, and different oxygen concentrations), the indium tin oxide thin films were deposited on an ITO/glass substrate to form an ITOX/ITO structure. Using the metal mask and RF magnetron sputtering method again, another indium tin oxide upper electrode was deposited (with 100% Argon concentration) on it to form a transparent MIM ITO/ITOX/ITO RRAM structure.

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