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標題Title: A Two-Dimensional Analytical Threshold Voltage Model for Symmetrical Tri-Material Gate Stack Double Gate (STMGSDG) MOSFET,s-1
作者Authors: 陳美利,林文楷..等
上傳單位Department: 光電工程系
上傳時間Date: 2010-6-22
上傳者Author: 陳美利
審核單位Department: 光電工程系
審核老師Teacher: 陳美利
檔案類型Categories: 研討會報告Seminar Report
關鍵詞Keyword: tri-material, gate stack, double gate, short-channel effects(SCEs) , hot carrier effects.
摘要Abstract: Based on resultant solution of two-dimensional(2-D) Poisson’s equation in silicon region, a new analytical model consisting of the two-dimensional potential and threshold voltage for fully depleted symmetrical tri-material gate stack double gate (STMGSDG) MOSFET has been developed. The new model is verified in good agreement with numerical simulation results over a wide range of the device parameters. The model not only offers the physical insight into device physics but also provides the basic designing guideline for the device.

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2010_6_4a2ca1e4.doc 536Kb doc 292 44
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