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標題Title: Morphological and Photoelectrochemical Properties of ALD
作者Authors: 鄭錫恩,Chia-Chuan Chen..等
上傳單位Department: 光電工程系
上傳時間Date: 2010-6-22
上傳者Author: 鄭錫恩
審核單位Department: 光電工程系
審核老師Teacher: 鄭錫恩
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Nucleation and Growth, atomic layer deposition
摘要Abstract: TiO2 films were grown by atomic layer deposition ALD at 200–500°C with TiCl4 and H2O as gas sources. The relationships
among deposition temperature, microstructure, and photoelectrochemical properties were investigated.

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