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標題Title: Double-step resistive superconducting transitions of indium and gallium in porous glass
作者Authors: 林開政,C. Tien..等
上傳單位Department: 機械工程系
上傳時間Date: 2010-6-30
上傳者Author: 林開政
審核單位Department: 機械工程系
審核老師Teacher: 林開政
檔案類型Categories: 論文Thesis
關鍵詞Keyword: phase transition, porous glass
摘要Abstract: We studied indium and gallium in porous glass by resistance and magnetization measurements. For indium
in porous glass, a very sharp superconducting transition is observed at T154.060.05 K. When a 1.5 T
magnetic field is applied, there is a second transition at T2;3.5 K. At 3.5 K, the field dependence of resistance
R(H) indicates two transitions at Hc
u;1.4 and Hc l ;0.4 T separated by a plateau. For indium in porous glass,
the origins of two-step transitions in R(T) and R(H) might be the same. At Hc
u ~or T1) the individual grains
of indium in porous glass become superconductors and at Hc l ~or T2) all grains are coupled. For gallium in
porous glass, two superconducting transitions of R(T) at T157.0 and T256.3 K are observed. Between 6.35
and 6.30 K, R(T) increases sharply with decreasing temperature. The quasiparticle tunneling or the conductorsuperconductor-
conductor coupling might cause the sharp rise in resistance between 6.35 and 6.30 K. At 6 K,
there are two transitions at Hc
u52.1 T and Hc l 51.1 T in the R(H) for gallium in porous glass. The two different
transitions of R(H) might be caused by a filamentary ‘‘internal structure’’ of gallium crystallites. There is no
diamagnetism at T1 . The magnetic transition temperature TM at 3, 4, 5, 6, and 7 T are measured; for all the
cases, TM,T2 .

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