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標題Title: Static Divided Word Matching Line for Low-power Content Addressable Memory Design
作者Authors: 曹正曄
上傳單位Department: 電子工程系
上傳時間Date: 2010-7-13
上傳者Author: 曹正曄
審核單位Department: 電子工程系
審核老師Teacher: 陳順智
檔案類型Categories: 課堂報告In-class Report
關鍵詞Keyword: CAM, NAND type CAM, NOR type CAM
摘要Abstract: In this paper, a novel Content Addressable Memory (CAM) word structure with divided word matching line for low-power application is proposed. To reduce the comparison power consumption, the proposed CAM word structure adopts static circuit design to improve the overall system reliability and reduce the power consumption. In addition, a new CAM cell with single bit line circuit design is proposed. The single bit line design requires only one heavy loading bit line, and prevents the frequently switching that designed in conventional basic CAM cell. Based on TSMC 0.25 μm CMOS process with 2.5 V supply voltage, a 128 words by 32 bits CAM is designed. The simulation result shows that the power consumption of the proposed CAM is 17.12 mW under 300 MHz operation frequency.

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2010_7_285828ef.ppt 768Kb ppt 1235 30
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