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標題Title: The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers
作者Authors: 邱裕中,T H Chiang..等
上傳單位Department: 電子工程系
上傳時間Date: 2011-5-20
上傳者Author: 邱裕中
審核單位Department: 電子工程系
審核老師Teacher: 邱裕中
檔案類型Categories: 論文Thesis
關鍵詞Keyword: GaN-based,light-emitting diodes, different current-blocking layers
摘要Abstract: This study employed Ar plasma treatment to selectively damage the p-GaN surface under the
p-pad electrode as a current-blocking layer (CBL) on nitride-based light-emitting diodes
(LEDs). Increasing the resistivity of the p-GaN region under the p-pad electrode can reduce
the current flowing vertically downward from the p-pad electrode. At an injection current of
20 mA, the light output power of LEDs with Ar plasma treatment was 13% larger than that of
conventional LEDs. At an injection current of 100 mA, the temperature of the p-pad metal on
LEDs with Ar plasma treatment is 13 ◦C lower than that of the LEDs with a SiO2 CBL.
However, the electrostatic discharge endurance of LEDs with Ar plasma treatment is the worst
due to the surface damage of p-GaN under the p-pad electrode.

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2011_5_39688526.pdf 1211Kb pdf 344 124
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