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標題Title: A Novel Fabrication of p-n Diode Based on ZnO Nanowire/p-NiO Heterojunction
作者Authors: 邱裕中,Sheng-Po Chang..等
上傳單位Department: 電子工程系
上傳時間Date: 2011-5-20
上傳者Author: 邱裕中
審核單位Department: 電子工程系
審核老師Teacher: 邱裕中
檔案類型Categories: 論文Thesis
關鍵詞Keyword: p–n Diode,ZnO Nanowire/p-NiO Heterojunction
摘要Abstract: We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at similar to 1 V. Furthermore, the current vs voltage characteristic is dominated by space-charge-limited current (SCLC) at high (1.1 V) forward bias.

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2011_5_68774395.pdf 630Kb pdf 567 629
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