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標題Title: Growth of quaternary AlInGaN with various TMI molar rates
作者Authors: 邱裕中,S.F. Yu a..等
上傳單位Department: 電子工程系
上傳時間Date: 2011-5-20
上傳者Author: 邱裕中
審核單位Department: 電子工程系
審核老師Teacher: 邱裕中
檔案類型Categories: 論文Thesis
關鍵詞Keyword: AlInGaN,various TMI molar rates
摘要Abstract: We report the growth of very thick (similar to 400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

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2011_5_0468556a.pdf 1751Kb pdf 248 91
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