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標題Title: Improved Optical and ESD Characteristics for GaN-Based LEDs With an n(-)-GaN Layer
作者Authors: 邱裕中,T. H. Chiang..等
上傳單位Department: 電子工程系
上傳時間Date: 2011-5-20
上傳者Author: 邱裕中
審核單位Department: 電子工程系
審核老師Teacher: 邱裕中
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Improved Optical, ESD ,, GaN-Based LEDs,n−-GaN Layer
摘要Abstract: Nitride-based light-emitting diodes (LEDs) with an n(-)-GaN layer are proposed and fabricated. By providing a larger series resistance in the vertical direction, it was found that the n(-)-GaN layer could enhance LED output intensity due to the enhanced current spreading. It was also found that LEDs with n(-)-GaN layer thicknesses of 0.15, 0.2, and 0.25 mu m could endure electrostatic discharge surges up to -1200, -1800, and -3000 V, respectively.

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2011_5_f4047358.pdf 326Kb pdf 695 153
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