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標題Title: Design Considerations for Monolitfilc Microwave Circuits
作者Authors: 張孟偉
上傳單位Department: 電子工程系
上傳時間Date: 2011-5-21
上傳者Author: 張孟偉
審核單位Department: 電子工程系
審核老師Teacher: 陳文山
檔案類型Categories: 課堂作業Class Assignment
關鍵詞Keyword: Design Considerations Monolitfilc Microwave Circuits
摘要Abstract: A bstracf— Monolithic microwave integrated circuits based on sificon-onsapphire (SOS) and gallium arsenide technologies are being considered
seriously as viable candidates for satellite communication systems, airborne
radar, and other applications. The low-loss properties of sapphire and
$emi-insulating GSAS substrates, combined with the excellent microwave
performance of metaf-semieondtrctor RET’s (MESFET%), allows, for the
first time, a trrdy monolithic approach to microwave integrated circuits. By
monolithic we mean an approach wherein all passive and active circuit
elements and interconnections are formed into the bulk, or onto the surface
of the substrate by some deposition scheme, such as epitaxy, ion implantation, sputtering, evaporation, and other methods.
The importance of this development is that microwave applications such
as airborne phased-array systems based on a large number of identical
circuits and requiring small physical volnme and/or fight weight, may,
finally, become cost effective.
The paper covers in some detail the design considerations that must be
appfied to monolithic microwave circuits in general, and to gaflium arsenide
circuits in particnfar. The important role being played by computer-aided
design tiAndques is stressed, Numerous examples of monolithic circuits
and components which illustrate the design principles are described. These
provide a cross section of the world-wide effort in this field. A glimpse into
tbe future prospects of monolithic microwave circuits is made.

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2011_5_0158d726.pdf 3177Kb pdf 246 129
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