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標題Title: Effects of annealing on structure, resistivity and transmittance of Ga doped ZnO films
作者Authors: 董祐成,k.Yim..等
上傳單位Department: 機械工程系
上傳時間Date: 2011-5-25
上傳者Author: 董祐成
審核單位Department: 機械工程系
審核老師Teacher: 林克默
檔案類型Categories: 課堂報告In-class Report
關鍵詞Keyword: GZO,annealing
摘要Abstract: In this paper the authors has reported the effects of annealing temperature and atmosphere on the electrical resistance and optical transmittance of GZO thin films prepared by radio frequency (RF) magnetron sputtering.
Annealing effects in the annealing temperature range up to 600uC were investigated to understand the effects of thermal energy and annealing atmosphere on the electrical and optical properties of GZO films better,although annealing at such high temperatures are not allowed in most TCO applications.


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2011_5_6ed357cb.ppt 894Kb ppt 220 181
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