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標題Title: The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin FilmsPrepared by Sol-Gel Technology
作者Authors: 簡聰富,Tsung-Fu Chien..等
上傳單位Department: 電機工程系
上傳時間Date: 2011-6-1
上傳者Author: 簡聰富
審核單位Department: 電機工程系
審核老師Teacher: 簡聰富
檔案類型Categories: 論文Thesis
關鍵詞Keyword: Ferroelectric, sol-gel technology, CBT, thin films, IV, CV
摘要Abstract: In this study, thin films of CaBi4Ti4O15 with preferential crystal orientation were prepared
by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a
crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15 thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for
1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM).

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